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Growth‐Rate‐Dependent Properties of GaSb/GaAs Quantum Dots on (001) Ge Substrate by Molecular Beam Epitaxy
Author(s) -
Zon,
Phienlumlert Pakawat,
Thainoi Supachok,
Kiravittaya Suwit,
Tandaechanurat Aniwat,
Nuntawong Noppadon,
Sopitpan Suwat,
Yordsri Visittapong,
Thanachayat Chanchana,
Kanjanachuchai Songphol,
Ratanathammaphan Somchai,
Panyakeow Somsak,
Ota Yasutomo,
Iwamoto Satoshi,
Arakawa Yasuhiko
Publication year - 2019
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201800499
Subject(s) - molecular beam epitaxy , quantum dot , substrate (aquarium) , optoelectronics , materials science , epitaxy , nanotechnology , biology , layer (electronics) , ecology
Tuning growth of nanostructures can provide additional routes to engineer their characteristics. In this work, the authors report on a combined growth of GaSb/GaAs quantum dots (QDs) and growth of GaAs on (001) Ge substrate. Surface decorated with GaAs anti‐phase domain is the initial template to investigate the growth‐rate effects on the growth of self‐assembled GaSb QDs. By varying the GaSb growth rates, QD ensembles with different morphologies are formed. Perpendicular alignment of elongated GaSb QDs is observed. Cross‐sectional transmission electron microscopic images show a substantial reduction of lateral QD size when it is buried in GaAs matrix. Raman scattering as well as power‐dependent photoluminescence spectroscopies are performed to reveal the optical properties of the nanostructures. Type‐II band alignment characteristic is confirmed.