Premium
Extracting Small‐Signal Model Parameters of Graphene‐Based Field‐Effect Transistors
Author(s) -
Wang ShaoQing,
Miao RuiXia,
Peng SongAng,
Jin Zhi
Publication year - 2018
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201800477
Subject(s) - graphene , field effect transistor , transistor , signal (programming language) , small signal model , materials science , biological system , saturation (graph theory) , computer science , electronic engineering , optoelectronics , nanotechnology , mathematics , engineering , electrical engineering , voltage , combinatorics , biology , programming language
This paper is aimed at extracting the intrinsic and extrinsic model parameter values of a small signal model based only on S‐parameter measurements. An analytically derived method to extract parasitic resistances and then obtain the all intrinsic parameters according to the previous method are proposed. Experiment results show the extracted model parameters can fit the test data well for our device, which illustrate the validity and accuracy of the extraction method. In addition, the authors analyze the huge differences of small‐signal parameters between graphene‐based field‐effect transistors (FETs) and traditional MOSFETs in saturation, and then point out the specific direction of improving the radio frequency performance of graphene‐based field‐effect transistors.