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Phonon Dynamics at an Oxide Layer in Silicon: Heat Flow and Kapitza Resistance
Author(s) -
Stanley Christopher M.,
Estreicher Stefan K.
Publication year - 2019
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201800428
Subject(s) - materials science , thermal conductivity , phonon , interfacial thermal resistance , nanowire , oxide , amorphous solid , silicon , thermal resistance , layer (electronics) , thermal , ab initio , heat flow , condensed matter physics , amorphous silicon , thermodynamics , nanotechnology , composite material , chemistry , optoelectronics , crystalline silicon , crystallography , physics , metallurgy , organic chemistry
The interactions between heat flow and an oxide layer in Si are studied within two temperature windows using non‐equilibrium ab initio molecular‐dynamics (MD). The model system is a H‐saturated Si nanowire containing an amorphous SiO x layer. The nanowire is in a large 1‐D periodic box which prevents thermal contamination between image nanowires. The results show that the oxide acts as barrier to heat flow and substantially increases the time required for the system to reach thermal equilibrium. This effect is caused by the higher‐frequency vibrational modes in the oxide relative to Si, and is unrelated to the low thermal conductivity of SiO x . A new first‐principles method to calculate the Kapitza resistance of the interface directly from the MD data is proposed.