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Homoepitaxial Diamond Structures with Incorporated SiV Centers
Author(s) -
Felgen Nina,
Naydenov Boris,
Jelezko Fedor,
Reithmaier Johann P.,
Popov Cyril
Publication year - 2018
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201800371
Subject(s) - diamond , monocrystalline silicon , materials science , reactive ion etching , plasma etching , etching (microfabrication) , optoelectronics , nanotechnology , silicon , metallurgy , layer (electronics)
The incorporation of SiV centers during diamond overgrowth on top of partly covered monocrystalline diamond pillars with diameters down to 200 nm are reported. The pillars themselves are prepared via electron beam lithography and inductively coupled plasma reactive ion etching. Then they are covered with a spin‐on‐glass (SOG) (perhydropolysilazane, PHPS) still jutting the apices of the pillars. After a short overgrowth step and removal of the residual SOG the optical investigations reveal the presence of ensembles of SiV centers in the overgrown part of the pillars, a specific location of the centers, and a very strong PL signal.