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Thermal Stability and Oxidation of Group IV Terminated (100) Diamond Surfaces
Author(s) -
Sear Michael J.,
Schenk Alex K.,
Tadich Anton,
Stacey Alastair,
Pakes Chris I.
Publication year - 2018
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201800283
Subject(s) - germanium , silicon , diamond , x ray photoelectron spectroscopy , materials science , germanium oxide , thermal stability , oxide , oxygen , thermal oxidation , chemical engineering , analytical chemistry (journal) , chemistry , composite material , optoelectronics , metallurgy , organic chemistry , engineering
High resolution X‐ray photoelectron spectroscopy is used to explore the thermal stability of as‐prepared and oxidized silicon and germanium‐terminated (100) diamond surfaces which form two domain (3 × 1) surface reconstructions. The as‐prepared germanium and silicon‐terminated surfaces are stable up to 1200 °C, making them the most thermally stable surface termination for diamond (100). The oxidized forms of these surfaces can be created via exposure to O 2 , H 2 O or atmospheric conditions and retain the (3 × 1) surface symmetry. The thermal stability of the oxidized surfaces exhibit differing behavior. A 700 °C anneal is sufficient to liberate oxygen from the germanium‐oxide‐terminated (100) diamond surface, leaving the pristine germanium‐terminated surface, while the silicon‐oxide‐terminated surface is thermally stable up to 1200 °C, at which point both silicon and oxygen are removed.