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Laser Fluence Dependence of the Electrical Properties of MoO 2 Formed by High Repetition Femtosecond Laser Pulses
Author(s) -
CamachoLopez Santiago,
PerezLopez Israel O.,
CanoLara Miroslava,
EsparzaGarcia Alejandro,
MayaSanchez M. Carmen,
ReynosoHernandez J. Apolinar,
CamachoLopez Marco
Publication year - 2018
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201800226
Subject(s) - fluence , materials science , electrical resistivity and conductivity , femtosecond , laser , sapphire , optoelectronics , sheet resistance , thin film , molybdenum trioxide , optics , oxide , molybdenum , layer (electronics) , nanotechnology , metallurgy , physics , electrical engineering , engineering
Molybdenum oxides have gained attention in the last few years due to their vast variety of polymorphs. These materials relate to technological applications in several devices to exploit their chromic and electrical features, among others. Molybdenum oxide (MoO 2 and Mo 4 O 11 ) tracks are obtained in molybdenum thin films, deposited on glass substrates, by a previously reported (by our research group) optical technique based on femtosecond pulses from a Ti:sapphire laser oscillator. The present work reports on both the electrical resistance and resistivity of MoO 2 tracks as a function of the per pulse laser fluence ( F p ) used for the oxide synthesis. It is found that the electrical resistance, as well as the resistivity, of the MoO 2 tracks drops as the delivered laser fluence is increased. The resistivity was determined to drop from 1.7 × 10 −3 Ω cm to 5 × 10 −4 Ω cm. This result agrees well with resistivity measurements reported in the literature for MoO 2 nanosheets and films, respectively. This is explained by the fact that at low laser fluence the MoO 2 forms a very thin surface layer, while for high laser fluences the MoO 2 will get thick.