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Structural and Luminescence Properties of Ga 2 O 3 :Zn Micro‐ and Nanostructures
Author(s) -
López Iñaki,
AlonsoOrts Manuel,
Nogales Emilio,
Méndez Bianchi
Publication year - 2018
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201800217
Subject(s) - cathodoluminescence , luminescence , materials science , monoclinic crystal system , photoluminescence , raman spectroscopy , analytical chemistry (journal) , doping , crystal structure , optoelectronics , crystallography , optics , chemistry , physics , chromatography
High quality Zn‐doped monoclinic gallium oxide micro‐ and nanostructures are obtained by a thermal treatment based on vapor–solid (VS) growth mechanism. Nanowires and ribbons are formed, the latter being the more abundant. The microstructural features are assessed by micro‐Raman and transmission electron microscopy revealing their crystal structure properties, such as the [‐110] growth direction for ribbons and being single crystals. In particular, a strong‐scattered light polarization dependence is reflected in the detected Raman modes. Luminescence of both Zn doped and undoped Ga 2 O 3 samples is thoroughly studied by several techniques, exciting light with electrons or photons. Cathodoluminescence (CL) at a wide temperature range reveals that a band centered at around 2.7 eV, assigned to Zn doping in monoclinic Ga 2 O 3 , is thermally activated at temperatures above 200 K and dominates at room temperature. Besides, the characteristic bands at 3.4 and 3.0 eV of undoped Ga 2 O 3 are obtained as well but with less relative intensity. Photoluminescence (PL) analysis at room temperature shows a similar set of bands, but slightly redshifted with respect to CL. Their relative intensities are strongly dependent on the excitation conditions and their time decays are studied by time‐resolved PL (TRPL).