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NV‐Center Formation in Single Crystal Diamond at Different CVD Growth Conditions
Author(s) -
Lobaev Mikhail A.,
Gorbachev Alexei M.,
Bogdanov Sergey A.,
Vikharev Anatoly L.,
Radishev Dmitry B.,
Isaev Vladimir A.,
Drozdov Mikhail N.
Publication year - 2018
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201800205
Subject(s) - diamond , misorientation , nitrogen , materials science , chemical vapor deposition , analytical chemistry (journal) , growth rate , crystal (programming language) , doping , methane , nanotechnology , chemistry , optoelectronics , metallurgy , environmental chemistry , grain boundary , microstructure , geometry , mathematics , organic chemistry , computer science , programming language
The nitrogen incorporation, diamond growth rate and fluorescence of as‐grown NV centers is studied at different CVD diamond growth conditions. Also, the influence of the misorientation angle is investigated. Heavily nitrogen doped layers are grown at different gas pressures and methane contents, with the maximum nitrogen concentration in the doped layer reaching 7 × 10 19 cm −3 . The ratio of NV center concentration to the total nitrogen content was determined. The studies are aimed to determine the conditions for creating ensembles with a high concentration of NV centers localized in diamond with nanometer accuracy.