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Study of Electrical Behavior of Metal‐Semiconductor Contacts on Exfoliated MoS 2 Flakes
Author(s) -
Moun Monika,
Singh Aditya,
Singh Rajendra
Publication year - 2018
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201800188
Subject(s) - ohmic contact , materials science , electrical contacts , schottky barrier , schottky diode , rectification , optoelectronics , metal , diode , contact resistance , semiconductor , electrical resistivity and conductivity , nickel , nanotechnology , metallurgy , electrical engineering , voltage , engineering , layer (electronics)
While 2D materials have been investigated for their potential applications in nanoelectronic and optoelectronic devices, their functionality is still not fully explored due to lack of proper understanding of metal contacts on these materials. The present work pertains to the study of electrical behavior of different metals such as chromium, silver, nickel, and platinum deposited on to exfoliated MoS 2 flakes. Comparative study of different metal contacts to MoS 2 shows that Ag/Au exhibits good ohmic behavior with high current injection efficiency and better linearity and symmetry of I–V curves than Cr/Au and Ni/Au contacts. Specific contact resistivity is measured to be 4.54 × 10 −4 Ω cm 2 using transmission line measurement (TLM) for Ag/MoS 2 contacts. Further, taking Ag/Au as ohmic contact, Pt/MoS 2 Schottky barrier diode is fabricated with a high rectification ratio of about 900. Barrier height and ideality factor of 0.56 eV and 2.1, respectively are obtained. This study opens up the possibility of having high quality metal contacts on MoS 2 with potential applications in nanoscale devices.