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Effect of N Concentration Upon Resistive Switching Behavior of Au/Ni/TaON/NiSi ECM Devices
Author(s) -
Park Jingyu,
Jeon Heeyoung,
Jang Woochool,
Kim Hyunjung,
Kim Hongki,
Jeon Hyeongtag
Publication year - 2018
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201800181
Subject(s) - materials science , sputtering , resistive random access memory , resistive touchscreen , optoelectronics , electrical conductor , conductivity , thin film , nanotechnology , electrode , composite material , electrical engineering , chemistry , engineering
In this study, Au/Ni/TaO x /NiSi and Au/Ni/TaON/NiSi electrochemical metallization memory devices are fabricated and their resistive switching (RS) behavior is investigated. The composition of TaON is controlled by changing the N partial pressure during sputtering. The Au/Ni/TaO x /NiSi device does not function as a memory device, whereas the Au/Ni/TaON/NiSi devices show conventional ECM characteristics. In addition, the device with the highest N concentration among those fabricate exhibites the best RS characteristics, with a constant high‐resistance‐state (HRS) current level and stable retention properties over 5 × 10 4 s, due to the formation of strong Ni conductive filaments (CFs). The TaON film with the highest N concentration has the lowest defect density, allowing stable Ni CFs to form and thereby yielding superior device performance.