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The Feasibility of Using Magnetron Sputtered MoO x as Effective Hole Injection Layer in Organic Light‐Emitting Diode
Author(s) -
Liu Liming,
Yu Hao,
Wang Honghang,
Zheng Qinghong,
Zhang Xiuyun,
Li Wanshu,
Zhang Yan,
Zhang Xiaowen,
Wei Bin
Publication year - 2018
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201800166
Subject(s) - sputter deposition , cavity magnetron , x ray photoelectron spectroscopy , oled , materials science , amorphous solid , layer (electronics) , optoelectronics , scanning electron microscope , sputtering , analytical chemistry (journal) , thin film , nanotechnology , chemical engineering , chemistry , composite material , crystallography , organic chemistry , engineering
Favorite transition metal oxide of MoO x is facilely deposited by using magnetron sputtering process and cast successful application to organic light‐emitting diodes (OLEDs). Magnetron sputtered MoO x is characterized in details with X‐ray diffraction, scanning electron microscopy, atomic force microscopy, X‐ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy. Magnetron sputtered MoO x shows amorphous structure, superior film morphology, non‐stoichiometry with slight oxygen deficiency and enhanced surface work function, which favorably contributes to hole injection promotion and efficiency improvement. The OLED with magnetron sputtered MoO x as hole injection layer behaves comparable performance to the counterpart with conventional vacuum thermally‐evaporated MoO x . The results demonstrate that magnetron sputtering technique provides an alternative approach for fabricating MoO x interfacial layer in organic electronic devices.