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Study of the Temperature Dependence of AlGaN/GaN HEMTs with Oxygen Plasma Treatment
Author(s) -
Wang Chong,
He Qing,
Wu Ji,
Zheng XueFeng,
He YunLong,
Wang Xin,
Tian Ye,
Mao Wei,
Ma XiaoHua,
Zhang JinCheng,
Hao Yue
Publication year - 2018
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201800092
Subject(s) - transconductance , high electron mobility transistor , materials science , threshold voltage , optoelectronics , annealing (glass) , saturation current , transistor , atmospheric temperature range , voltage , electrical engineering , metallurgy , meteorology , physics , engineering
The temperature‐dependent characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) and recessed‐gate AlGaN/GaN HEMTs combined with oxygen plasma treatment (rec + oxy HEMTs) are investigated over a range from 25 to 300 °C. The peak transconductance and saturation current of both types of devices decrease with the increase of temperature due to the decline of channel electron mobility. It is interesting to find that the threshold voltage (V TH ) exhibits a positive shift in the conventional HEMT, while a negative shift in the rec + oxy HEMT with temperature increases. The increase in gate leakage current with the temperature is dominated by tunneling mechanism. Furthermore, the annealing process of 300 and 400 °C for 2 min in N 2 ambient are utilized in these two kinds of devices for further estimation, respectively. It is found that the channel mobility can be recovered after the 400 °C annealing process, but the V TH shows an obvious negative shift in rec + oxy HEMTs.