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Schottky Barrier Diode Characteristics of Graphene‐GaN Heterojunction with Hexagonal Boron Nitride Interfacial Layer
Author(s) -
Kalita Golap,
Kobayashi Mai,
Shaarin Muhammad Dzulsyahmi,
Mahyavanshi Rakesh D.,
Tanemura Masaki
Publication year - 2018
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201800089
Subject(s) - materials science , graphene , heterojunction , schottky barrier , hexagonal boron nitride , optoelectronics , layer (electronics) , schottky diode , hexagonal crystal system , boron nitride , diode , metal–semiconductor junction , barrier layer , nanotechnology , chemistry , crystallography
Metal‐insulator‐semiconductor (MIS) based Schottky barrier diode (SBD) has significant importance for optoelectronics and other device applications. Here, we demonstrate the fabrication of a highly rectifying Schottky barrier diode (SBD) using a thin hexagonal boron nitride (hBN) interfacial layer in graphene and n‐type gallium nitride (n‐GaN) heterojunction. Significant reduction of reverse saturation current is obtained with the introduction of hBN layer in graphene/n‐GaN interface. The MIS based SBD shows excellent ultraviolet (UV) photoresponsivity with a light/dark ratio of ≈10 5 at a low reverse bias voltage (−1.5V). Temperature dependent current density‐voltage ( J – V ) characteristics of the graphene/hBN/n‐GaN heterojunction is investigated to elucidate the current transport behavior. The Schottky barrier height increased with increase in temperature from 0.77 to 0.98 eV in the temperature range of 298–373 K, respectively. The series resistance (R S ) is also found to be temperature dependent, where R S decreased with increase in temperature. The understanding of graphene/hBN/n‐GaN heterojunction device characteristics can be significant for photodiode and switching device applications.