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Avalanche Ruggedness of GaN p‐i‐n Diodes Grown on Sapphire Substrate
Author(s) -
Liu Wenkai,
Xu Weizong,
Zhou Dong,
Ren Fangfang,
Chen Dunjun,
Yu Peng,
Zhang Rong,
Zheng Youdou,
Lu Hai
Publication year - 2018
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201800069
Subject(s) - avalanche breakdown , avalanche diode , materials science , optoelectronics , breakdown voltage , single photon avalanche diode , diode , zener diode , substrate (aquarium) , sapphire , avalanche photodiode , voltage , electrical engineering , optics , transistor , physics , engineering , laser , oceanography , detector , geology
Avalanche capability plays critical roles in safe operation of GaN‐based high power devices and systems. In this study, GaN‐based quasi‐vertical p‐i‐n diodes on sapphire substrate with avalanche capability are fabricated, and for the first time, their avalanche ruggedness is investigated. Repeated avalanche breakdown tests suggest the representative features of avalanche‐capability degradation, reduction in breakdown voltage, and rise in reverse leakage current. Further numerical simulations reveal the localization of avalanche breakdown, while subsequent pulsed current–voltage measurements identify that the thermal heating effect generated during localized avalanche multiplication is responsible for the device degradation in avalanche ruggedness.