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Proximity gettering technology for advanced CMOS image sensors using carbon cluster ion‐implantation technique: A review (Phys. Status Solidi A 7∕2017)
Author(s) -
Kurita Kazunari,
Kadono Takeshi,
Okuyama Ryousuke,
Shigemastu Satoshi,
Hirose Ryo,
OnakaMasada Ayumi,
Koga Yoshihiro,
Okuda Hidehiko
Publication year - 2017
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201770141
Subject(s) - wafer , getter , materials science , ion implantation , optoelectronics , silicon , cmos , fabrication , carbon fibers , nanotechnology , ion , chemistry , organic chemistry , composite number , composite material , medicine , alternative medicine , pathology
The CMOS image sensor manufacturing has a strong demand for silicon wafers with the highest gettering capability for device fabrication processes. To meet this demand, Kurita et al. (article No. 201700216 ) have developed a new gettering wafer production concept using a carbon cluster ion implantation technique. This technique allows to implant a silicon wafer surface simultaneously with carbon and hydrogen elements that form the projection range, by using a hydrocarbon compound molecular gas source. Moreover, it was found that a carbon cluster ion implanted silicon wafer had three unique characteristics for high performance of CMOS image sensors. First, a carbon cluster ion projection range has a high gettering capability of metallic impurities. Second, this projection range also has a diffusion barrier effect for oxygen impurities, out‐diffusing to the device active region from a silicon wafer substrate. Third, it is expected that the diffusing hydrogen to the device's active region from the hydrogen of the carbon cluster ions gettered in the projection range during the device fabrication process, will have a passivation effect on unreconstructed interface state densities such as shallow trench isolation. The authors believe that such wafers will be beneficial for advanced CMOS image sensor fabrication processes.