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Solar blind photodetector based on epitaxial zinc doped Ga 2 O 3 thin film (Phys. Status Solidi A 5∕2017)
Author(s) -
Alema Fikadu,
Hertog Brian,
Ledyaev Oleg,
Volovik Dmitry,
Thoma Grant,
Miller Ross,
Osinsky Andrei,
Mukhopadhyay Partha,
Bakhshi Sara,
Ali Haider,
Schoenfeld Winston V.
Publication year - 2017
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201770127
Subject(s) - responsivity , photodetector , materials science , epitaxy , optoelectronics , doping , band gap , annealing (glass) , thin film , nanotechnology , metallurgy , layer (electronics)
Solar blind UV photodetectors (SBPs) with a cutoff wavelength < 290 nm are of great interest for a variety of military and civilian applications. Previously, Mg x Zn 1‐x O and Al x Ga 1−x N alloys have been widely investigated for these applications. However, increasing the content of Mg (x > 0.37) or Al (x > 0.45) to achieve true solar blindness is accompanied, respectively, by phase segregation in MgZnO or film quality deterioration in AlGaN. An alternative material which is naturally suitable not only for solar blind detection but also for realizing true solar blindness is β‐Ga 2 O 3 . Its wide bandgap (∼ 4.9 eV) and suitability for growth by epitaxial deposition systems make it an excellent candidate for SBPs. Here, Alema etal. (article No. 201600688 ) grew doped (Zn) and undoped β‐Ga 2 O 3 epitaxial films using MOCVD and fabricated the films into MSM photodetectors. The Zn doped β‐Ga 2 O 3 detectors showed a peak responsivity of 210 A/W with a rejection ratio of 5x10 4 . The results provide a roadmap towards achieving high responsivity SBPs with strong selectivity in the solar blind spectral window. The cover page shows a schematic illustration of MSM photodetectors fabricated from undoped and Zn doped β‐Ga 2 O 3 along with their I–V characteristics, and a response spectra with and without annealing.