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Production of p‐Type Si/n‐Type β‐FeSi 2 Heterojunctions Using Facing‐Targets Direct‐Current Sputtering and Evaluation of Their Resistance and Interface State Density
Author(s) -
Chaleawpong Rawiwan,
Promros Nathaporn,
Charoenyuenyao Peerasil,
Nopparuchikun Adison,
Sittimart Phongsaphak,
Nogami Tomohiro,
Yoshitake Tsuyoshi
Publication year - 2018
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201701022
Subject(s) - heterojunction , materials science , sputtering , epitaxy , annealing (glass) , wafer , analytical chemistry (journal) , optoelectronics , current density , equivalent series resistance , capacitance , atmospheric temperature range , conductance , thin film , voltage , condensed matter physics , nanotechnology , electrical engineering , chemistry , electrode , composite material , physics , layer (electronics) , engineering , chromatography , quantum mechanics , meteorology
Without a post‐annealing procedure, the β‐FeSi 2 thin films are epitaxially grown on Si(111) wafer substrates via facing‐targets direct‐current sputtering. During epitaxial growth, the temperature for heating of substrates is maintained at 600 °C. The resultant p‐type Si/n‐type β‐FeSi 2 heterojunctions are produced. At room temperature, a large leakage current under an applied reverse bias voltage together with a small photo‐detective performance is observed from the measured dark and irradiated current density–voltage curves of the created heterojunctions. Both of the conductance–voltage ( G/ω – V ) and capacitance–voltage ( C–V ) measurements at different frequencies ( f ) in the range of 5 kHz–1 MHz are performed in the dark at room temperature. The interface state density ( N ss ) and series resistance ( R s ) in the created p‐type Si/n‐type β‐FeSi 2 heterojunctions are computed and analyzed from the measured C – V – f and G/ω – V – f curves. N ss is found to be 3.48 × 10 12 eV −1 cm −2 at 5 kHz and decreased to 4.68 × 10 11 eV −1 cm −2 at 1 MHz. Moreover, the values of R s at zero bias are 2.21 kΩ at 5 kHz and 13.66 Ω at 1 MHz. These results review the presence of N ss and R s in the created heterojunctions, and they can be the cause to degrade the heterojunction performance.