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Influence of Oxygen on the Resistivity of Co‐Sputtered Transparent AZO Films
Author(s) -
Novák Petr,
Kozák Tomáš,
Šutta Pavol,
Kolega Michal,
Bláhová Olga
Publication year - 2018
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201700951
Subject(s) - electrical resistivity and conductivity , materials science , crystallinity , sputtering , oxygen , aluminium , metal , oxide , ceramic , thin film , analytical chemistry (journal) , chemical engineering , composite material , metallurgy , nanotechnology , chemistry , organic chemistry , chromatography , electrical engineering , engineering
In the present work co‐sputtering from ceramic and metallic targets is used to reduce the oxygen content in aluminium doped zinc oxide. Films with thickness between 200 and 220 nm are sputtered at 100 and 250 °C and investigated by X‐ray diffraction, energy dispersive spectroscopy, and Hall measurements. It is found that reducing of the incorporated oxygen in the film leads to higher carrier concentration, mainly due to better effective activation of Al donors. Higher temperatures result in better carrier mobility due to improving the crystallinity. The best resistivity of 1.4 × 10 −3 Ω cm of the highly transparent film prepared at 100 °C is achieved. A larger oxygen reduction leads to lower resistivity, but also results in the significant deterioration of transmittances.