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Optical, Physical and Structural Properties of Er 3+ Doped Low‐Phonon Energy Vitreous Matrix: ZnO‐B 2 O 3 ‐TeO 2
Author(s) -
Chopra Neetu,
Kaur Sandeep,
Kaur Manpreet,
Singla Shivani,
Marwaha Ritika,
Sharma Gopi,
Heer Manmohan Singh
Publication year - 2018
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201700934
Subject(s) - fourier transform infrared spectroscopy , spectroscopy , amorphous solid , erbium , materials science , analytical chemistry (journal) , band gap , excited state , absorption spectroscopy , absorption (acoustics) , refractive index , doping , crystallography , chemistry , optics , optoelectronics , physics , atomic physics , quantum mechanics , chromatography , composite material
This paper reports on the effect of varying concentration of erbium (Er 3+ ) on the (70‐ x /2) TeO 2 − (20‐ x /2) B 2 O 3 −10 ZnO − x Er 2 O 3 (where x = 0, 0.5, 1.0, 2.0, 2.5 mol.%) system, fabricated using the conventional melt quenching technique. The impact of Er 3+ on the structural, physical, and optical properties of these zinc borotellurite glasses is investigated using Fourier transform infrared spectroscopy (FTIR), density measurements and UV–vis spectroscopy. The amorphous nature is confirmed using X‐Ray diffraction. FTIR results reveal that the glass is formed of fundamental borate and tellurite network units. The addition of Er 2 O 3 results in the formation of TeO 3 at the expense of Te‐O‐Te linkage. The UV–vis spectroscopy results show that Er 3+ enter the glass matrix showing absorption peaks corresponding to 4f‐4f transitions of trivalent Erbium ions (Er 3+ ) from ground state 4 I 15/2 to the excited states 4 F 5/2 , 4 F 7/2 , 2 H 11/2 , 4 S 3/2 , 4 F 9/2 , 4 I 9/2 , 4 I 11/2 , and 4 I 13/2 . The optical band gap tends to decrease and refractive index increases with the increase in Er 3+ concentration hence making these materials more efficient for the optical devices such as light emitting devices and image sensors.