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InN Layers Grown by MOCVD on a ‐Plane Al 2 O 3
Author(s) -
Buzynin Yury N.,
Khrykin Oleg I.,
Yunin Pavel A.,
Drozdov Mikhail N.,
Luk'yanov Andrey Yu.
Publication year - 2018
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201700919
Subject(s) - sapphire , metalorganic vapour phase epitaxy , epitaxy , indium , materials science , photoluminescence , plane (geometry) , layer (electronics) , optoelectronics , chemical vapor deposition , crystallography , optics , chemistry , nanotechnology , geometry , physics , laser , mathematics
The conditions for obtaining epitaxial InN layers on a ‐plane (11–20) sapphire with a GaN buffer layer by MOCVD method are determined for the first time. Comparative studies show that InN layers on a ‐plane sapphire have higher structural perfection and improved photoluminescence properties compared to those grown on c ‐plane sapphire. Formation of indium clusters in the InN layers along with the conditions impeding their appearance is considered.