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Growth‐Parameter Dependence of Polarity and Electronic Transports in ZnO Thin Films Deposited by Magnetron Sputtering
Author(s) -
Ohsawa Takeo,
Tsunoda Kei,
Dierre Benjamin,
Grachev Sergey,
Montigaud Hervé,
Ishigaki Takamasa,
Ohashi Naoki
Publication year - 2018
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201700838
Subject(s) - sputter deposition , polarity (international relations) , thin film , materials science , sputtering , optoelectronics , analytical chemistry (journal) , condensed matter physics , chemistry , nanotechnology , physics , environmental chemistry , biochemistry , cell
Growth‐parameter dependence of crystalline polarity and associated electronic transport properties of zinc oxide (ZnO) thin films deposited by radio‐frequency magnetron sputtering are investigated. The magnitudes of sputtering input power and distance between the substrate and ZnO target play crucial roles in controlling the polarity either the (0001) or( 000 1 ¯ )planes. In addition, the crystallinities and surface morphologies of the films are largely different between the two types of planes. Remarkably, electrical conductivities of the (0001) films are a few orders of magnitude higher than those of the( 000 1 ¯ ) planes, which could be attributed to differences in the carrier concentration and Hall mobility. Insights gained in this study regarding controllable polarity is significant for understanding complicated optoelectronic properties even in nominally undoped ZnO films.