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Properties of In 2 S 3 ‐Based pin ‐Heterojunctions
Author(s) -
Jawinski Tanja,
Wägele Leonard A.,
Scheer Roland,
Grundmann Marius,
von Wenckstern Holger
Publication year - 2018
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201700827
Subject(s) - materials science , non blocking i/o , diode , heterojunction , optoelectronics , pulsed laser deposition , amorphous solid , rectification , doping , solar cell , open circuit voltage , semiconductor , electrode , evaporation , sputter deposition , short circuit , sputtering , vanadium , thin film , analytical chemistry (journal) , voltage , nanotechnology , chemistry , crystallography , metallurgy , electrical engineering , physics , biochemistry , engineering , chromatography , thermodynamics , catalysis
Undoped and vanadium‐doped In 2 S 3 is used to fabricate pin ‐diodes. As p ‐type semiconductor two materials are compared: nano crystalline NiO and amorphous zinc‐cobalt‐oxid (ZCO). n ‐ZnO:Al (AZO) is used as electrode to In 2 S 3 . In 2 S 3 ‐films are grown by co‐evaporation, NiO‐ and ZCO‐films by pulsed laser deposition (PLD) and ZnO:Al‐films by RF sputtering. The diodes exhibit high current rectification of up to 3 and 6 orders of magnitude at ±2 V for diodes with p ‐NiO and p ‐ZCO, respectively. Diodes with p ‐type ZCO are used for solar cell analysis. Upon illumination both solar cell types with undoped and V‐doped In 2 S 3 as absorber material show photovoltaic activity. We find open‐circuit voltages of up to 300 mV and short‐circuit current densities of up to 0.29 mA cm −2 .
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