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Optical and Photoelectric Properties of Planar Structures Obtained by Thermal Annealing of Ga 2 S 3 Plates in Zn Vapors
Author(s) -
Caraman Iuliana,
Evtodiev Silvia,
Untila Dumitru,
Palachi Leonid,
Susu Oana,
Evtodiev Igor,
Kantser Valeriu
Publication year - 2017
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201700808
Subject(s) - annealing (glass) , materials science , analytical chemistry (journal) , crystallite , photoconductivity , electrical resistivity and conductivity , photoelectric effect , photoluminescence , stoichiometry , absorption edge , seebeck coefficient , thermal conductivity , chemistry , band gap , optoelectronics , composite material , metallurgy , chromatography , electrical engineering , engineering
Ga 2 S 3 single crystals have been obtained by chemical vapor transport (CVT) in iodine vapors. The Ga 2 S 3 compound was synthesized from Ga and S taken in stoichiometric quantities. The compound has been subjected to long term thermal annealing (TA) at the temperatures of 850 and 1070 K for 6 to 60 h in Zn vapors. After TA the natural surface of Ga 2 S 3 single crystals contain a cover layer. The photoluminescence, photoconductivity and electrical conductivity of this layer depend on treatment conditions (temperature and duration). Electrical conductivity of these samples is 3–5 magnitude orders higher than for untreated crystals. The treated single crystals contain both Ga 2 S 3 and ZnS crystallites. Thermal annealing of Ga 2 S 3 crystals in Zn vapors leads to shifting of fundamental absorption edge toward low energies and absorption coefficient increase in the spectral region of 2.4–3.0 eV.