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Self‐Induced Nucleation Growth of GaN Columns by Chemical Vapor Deposition
Author(s) -
RamírezGonzález Francisco S.,
GarcíaSalgado Godofredo,
Morales Crisóforo,
Díaz Tomás,
Rosendo Enrique,
NietoCaballero Fabiola G.,
Luna José A.,
Coyopol Antonio,
Romano Román,
Galeazzi Reina,
Martínez Hugo
Publication year - 2018
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201700791
Subject(s) - nucleation , chemical vapor deposition , wurtzite crystal structure , materials science , agglomerate , wafer , deposition (geology) , substrate (aquarium) , chemical engineering , analytical chemistry (journal) , nanotechnology , composite material , chemistry , metallurgy , zinc , chromatography , paleontology , oceanography , organic chemistry , sediment , geology , engineering , biology
GaN columns are grown by (1 1 1) GaAs nitridation at 1000 °C. GaAs wafers are used as a substrate and Ga source. The nitridation is performed using a hydrogen and ammonia flow mix into a horizontal chemical vapor deposition (CVD) system at atmospheric pressure. XRD in correlation with pole figure shows that the structure is wurtzite with a (0 0 0 2) preferential plane. The SEM images show the growth of GaN columns with an agglomerate formation on top. EDS results show that the agglomerate is Ga rich, suggesting a self‐induced nucleation growth. The growth mechanism is discussed briefly. The average diameter and length of the columns are around 1.2 and 10 µm, respectively. The method reported here do not use a template or foreign metallic particles catalyst.