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The Influence of Annealing Temperature on Amorphous Indium‐Zinc‐Tungsten Oxide Thin‐Film Transistors
Author(s) -
Fu Ruofan,
Yang Jianwen,
Chang WeiChiao,
Chang WeiCheng,
Chang ChienMin,
Lin Dong,
Zhang Qun,
Liu PoTsun,
Shieh HanPing D.
Publication year - 2018
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201700785
Subject(s) - thin film transistor , annealing (glass) , amorphous solid , materials science , threshold voltage , tungsten , transistor , optoelectronics , indium , thin film , metallurgy , voltage , electrical engineering , composite material , nanotechnology , crystallography , chemistry , layer (electronics) , engineering
In this paper, the influence of annealing temperature on amorphous indium‐zinc‐tungsten‐oxide (a‐IZWO) thin‐film transistors (TFTs) is investigated. As the annealing temperature increases, the IZWO films maintain an amorphous state, which is conducive to the uniformity of the TFT. The field effect mobility of the device increases as a function of annealing temperature and reaches 16.2 cm 2 V −1 s −1 at 300 °C, along with an on/off current ratio of 1.6 × 10 8 . Meanwhile, the corresponding positive bias stability is improved, as confirmed by the fact that the threshold voltage shift value reduces to 0.4 V after being stressed for 1500 s. This result can be ascribed to the decrease in electrons captured by the deep defects in a‐IZWO TFTs.