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The Ultra‐Low Power Performance of a‐SiN x O y :H Resistive Switching Memory
Author(s) -
Zhang Hui,
Ma Zhongyuan,
Zhang Xinxin,
Sun Yang,
Liu Jian,
Xu Ling,
Li Wei,
Chen Kunji,
Feng Duan
Publication year - 2018
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201700753
Subject(s) - resistive random access memory , dangling bond , x ray photoelectron spectroscopy , plasma enhanced chemical vapor deposition , analytical chemistry (journal) , fourier transform infrared spectroscopy , materials science , chemical vapor deposition , oxygen , chemistry , nanotechnology , silicon , optoelectronics , nuclear magnetic resonance , physics , electrode , optics , organic chemistry , chromatography
Here we report that a‐SiN 0.69 O 0.53 :H films with ultra‐low power can be obtained in plasma‐enhanced chemical vapor deposition (PECVD) system by introduction of N 2 O into the a‐SiN x :H films. The composition of a‐SiN 0.69 O 0.53 :H films are confirmed by X‐ray photoelectron spectroscopy (XPS). Compared with the pure a‐SiN 0.62 :H‐based RRAM, it is interesting to find that the a‐SiN 0.69 O 0.53 :H‐based RRAM cells show ultra‐low current (≈5 pA at 0.5 V) at the high resistance state (HRS) and lower switching power (3.2 μW). The analysis of Fourier transform infrared spectroscopy (FTIR) reveals that the number of the SiH bonds decreased sharply accompanied with the appearance of the SiO bonds and the increase of NH bonds after the introduction of N 2 O. It further proves that the reduction of the Si dangling bond density under the applied voltage is the origin of the ultra‐low power for a‐SiN 0.69 O 0.53 :H device. Our introduction of oxygen into a‐SiN x :H films opens up a new way for the application of the SiN x ‐based RRAM in the future.