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Indium‐Assisted Plasma‐Enhanced Low‐Temperature Growth of Silicon Oxide Nanowires
Author(s) -
Khmel Sergey,
Baranov Evgeniy,
Barsukov Andrey,
Zamchiy Alexandr,
Zaikovskii Alexey,
Maximovskiy Evgeniy,
Gulyaev Dmitry,
Zhuravlev Konstantin
Publication year - 2018
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201700749
Subject(s) - nanowire , materials science , photoluminescence , indium , substrate (aquarium) , silicon , fourier transform infrared spectroscopy , chemical vapor deposition , analytical chemistry (journal) , argon , silicon oxide , plasma enhanced chemical vapor deposition , chemical engineering , nanotechnology , optoelectronics , chemistry , organic chemistry , oceanography , silicon nitride , geology , engineering
The nanowires of the silicon oxide SiO x ( x ≤ 2) are synthesized on an indium catalyst by the gas‐jet electron beam plasma chemical vapor deposition (GJ EBP CVD) method using a monosilane‐argon‐hydrogen mixture with the simultaneous supply of the oxygen into the vacuum chamber. The arrays of the aligned microropes (bundles) of nanowires are formed at the substrate temperatures of 200–335 °С. At the temperature of 160 °С the cocoon‐like structures of SiO x nanowires are synthesized. The obtained results are explained within the synthesis model suggested previously. The Fourier transform infrared (FTIR) transmittance spectra are recorded to study the chemical composition of the nanowires. It is shown that the nanowires synthesized at temperatures of 200–335 °С consist of SiO x with x = 1.93 ± 0.04. The arrays of the oriented microropes of the SiO x nanowires exhibit the intense photoluminescence at a room temperature with a maximum in a range of the energies from 2 to 3 eV. The photoluminescence spectra of the oriented microropes synthesized on silicon substrates with the indium catalyst are shifted toward lower energies from 2.7–2.8 to 2.4–2.5 eV at the changing growth temperatures from 200 to 335 °C.