Effect of NH 4 OH Treatment on Plasma‐Assisted InP/Al 2 O 3 /SOI Direct Wafer Bonding | Zendy

Gong Kewei | Zendy; Sun Changzheng | Zendy; Xiong Bing | Zendy; Han Yanjun | Zendy; Hao Zhibiao | Zendy; Wang Jian | Zendy; Wang Lai | Zendy; Li Hongtao | Zendy

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Effect of NH 4 OH Treatment on Plasma‐Assisted InP/Al 2 O 3 /SOI Direct Wafer Bonding

Author(s) -

Gong Kewei,

Sun Changzheng,

Xiong Bing,

Han Yanjun,

Hao Zhibiao,

Wang Jian,

Wang Lai,

Li Hongtao

Publication year - 2018

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.201700739

Subject(s) - x ray photoelectron spectroscopy , wafer , wafer bonding , materials science , direct bonding , surface roughness , analytical chemistry (journal) , contact angle , atomic force microscopy , chemistry , nanotechnology , chemical engineering , composite material , chromatography , engineering

The effect of NH 4 OH treatment on InP/Al 2 O 3 /SOI direct wafer bonding is investigated. The atomic force microscope (AFM) and water contact angle (CA) results reveal a decrease in root‐mean‐square (RMS) surface roughness and CA of the NH 4 OH‐treated InP wafer. X‐ray photoelectron spectroscopy (XPS) analysis is carried out to ascertain the chemical composition of the bonding surfaces. It is found that NH 4 OH treatment followed by plasma activation increases the content of oxides on the surface of InP wafer. Based on these results, it is concluded that NH 4 OH treatment helps increase hydrophilicity and contact area of the bonding surface, thus contributing to the success of plasma‐assisted InP/Al 2 O 3 /SOI wafer bonding.

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