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Bufferless GaN‐Based MOSFETs Fabricated on GaN‐on‐Insulator Wafer
Author(s) -
Won ChulHo,
Caulmilone Raphaël,
Cristoloveanu Sorin,
Im KiSik,
Lee JungHee
Publication year - 2018
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201700654
Subject(s) - materials science , mosfet , nanowire , optoelectronics , wafer , threshold voltage , insulator (electricity) , subthreshold conduction , silicon on insulator , gallium nitride , transistor , voltage , layer (electronics) , nanotechnology , electrical engineering , silicon , engineering
Three types of bufferless GaN‐based FETs are fabricated on GaN‐on‐insulator (GaNOI) wafer: i) recessed‐gate AlGaN/GaN MOSFET with threshold voltage ( V th ) of 4 V; ii) AlGaN/GaN nanowire gate‐all‐around (GAA) MOSFET with V th of −2 V; and iii) GaN nanowire GAA‐MOSFET with V th of 3.5 V. These devices are characterized and compared. The nanowire GAA‐MOSFET can be easily fabricated by simply removing buried oxide layer of GaNOI wafer. The recessed‐gate AlGaN/GaN MOSFET presents poor on‐current characteristic. On the other hand, the nanowire GAA‐MOSFETs show improved on‐current, reduced subthreshold swing (SS), good pinch‐off characteristics, and negligible current collapse phenomenon.