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High‐Performance E‐Mode AlGaN/GaN MIS‐HEMT with Dual Gate Insulator Employing SiON and HfON
Author(s) -
Hwang IlHwan,
Eom SuKeun,
Choi GwangHo,
Kang MyoungJin,
Lee JaeGil,
Cha HoYoung,
Seo KwangSeok
Publication year - 2018
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201700650
Subject(s) - materials science , transconductance , optoelectronics , high electron mobility transistor , misfet , breakdown voltage , threshold voltage , dielectric , insulator (electricity) , high κ dielectric , atomic layer deposition , layer (electronics) , voltage , transistor , electrical engineering , field effect transistor , nanotechnology , engineering
A high‐performance E‐mode AlGaN/GaN MIS‐HEMTs is fabricated with atomic layer deposited 5 nm SiON/16 nm HfON and with atomic layer deposited 22 nm HfON gate insulator and their characteristics are compared. Plasma nitridation is employed in every atomic layer deposition cycle to deposit SiON and HfON dielectrics. SiON is used as an interfacial layer to ensure a high‐quality AlGaN/dielectric interface, and high‐k HfON is employed to realize a large transconductance, a high on‐state current, and a high on/off current ratio. The E‐mode AlGaN/GaN MIS‐HEMT with 5 nm SiON/16 nm HfON exhibited more excellent DC and dynamic characteristics than that with 22 nm HfON. The fabricated MIS‐HEMT with dual gate insulator showed a high on/off ratio of ≈1.2 × 10 11 , a low off‐state drain leakage current less than 10 −11 A mm −1 , a threshold voltage of 1.1 V, a subthreshold slope of 77 mV dec −1 , a specific on‐resistance of 1.34 mΩ cm 2 , and a breakdown voltage of 800 V.