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Measurement of the Emission Lifetime of a GaN Interface Fluctuation Quantum Dot by Power Dependent Single Photon Dynamics
Author(s) -
Gao Kang,
Holmes Mark,
Arita Munetaka,
Arakawa Yasuhiko
Publication year - 2018
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201700630
Subject(s) - laser linewidth , quantum dot , photon , physics , exciton , optoelectronics , autocorrelation , photoluminescence , spontaneous emission , materials science , atomic physics , condensed matter physics , optics , laser , statistics , mathematics
Photon autocorrelation measurements are used to investigate the power dependent single photon emission of recently reported interface fluctuation GaN quantum dots (QDs), which exhibit relatively narrow emission linewidths. The intrinsic exciton lifetime of such a dot is evaluated to be 2.0 ± 0.1 ns from its power dependent single photon dynamics. This result is comparable with typical SK GaN QDs that emit at similar energy, and provides further evidence that the relatively narrow emission linewidth in such structures results from a cleaner dot environment.