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Determination of Suitable Indicators of AlGaN/GaN HEMT Wafer Quality Based on Wafer Test and Device Characteristics
Author(s) -
Zhong YiNan,
Tang ShunWei,
Hsin YueMing
Publication year - 2018
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201700628
Subject(s) - high electron mobility transistor , wafer , materials science , optoelectronics , epitaxy , transistor , photoluminescence , secondary ion mass spectroscopy , analytical chemistry (journal) , silicon , electrical engineering , nanotechnology , layer (electronics) , chemistry , voltage , chromatography , engineering
This study investigates various tests on AlGaN/GaN high electron mobility transistor (HEMT) wafers, including photoluminescence spectroscopy, secondary ion mass spectroscopy, X‐ray diffraction (XRD), and Hall measurement. The AlGaN/GaN HEMT wafers are grown on low‐resistivity Si substrates with various growth conditions for the buffer and channel layers. Characteristics of AlGaN/GaN HEMTs including drain lag, dynamic R ON , and current transients were measured and correlated with the results from the wafer level tests. Results indicate that epitaxial wafers with low yellow luminescence (YL) to band edge (BE) and blue luminescence (BL) to BE ratios as well as a low carbon concentration but a similar low full width at half maximum of XRD profiles can result in devices with significant suppression of current collapse and the same on‐state device characteristics. Therefore, both YL/BE and BL/BE values combined with the carbon concentration in wafer level tests are suitable indicators for estimating device performance.