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Continuous Wave Terahertz Sensing Using GaN HEMTs
Author(s) -
Javadi Elham,
DelgadoNotario Juan A.,
Masoumi Nasser,
Shahabadi Mahmoud,
VelázquezPérez Jesus E.,
Meziani Yahya M.
Publication year - 2018
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201700607
Subject(s) - high electron mobility transistor , terahertz radiation , optoelectronics , detector , materials science , transistor , physics , optics , electrical engineering , voltage , engineering
A commercial GaN high electron mobility transistor (HEMT) is investigated as efficient detector of terahertz radiations. Enhancement of the photoresponse in excess of one order of magnitude (up to 1 kV W −1 ) is obtained when a constant drain‐to‐source current is applied. The photoresponse remains unchanged with chopping frequency up to 5 kHz demonstrating a high‐speed response of GaN HEMT detectors. It is demonstrated that the bounding wires play an important role to couple terahertz radiations to the channel of the device. Terahertz imaging of hidden objects by using GaN HEMTs as a sensor is also demonstrated.