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Electrical and Optical Properties of Rectifying ZnO Homojunctions Fabricated by Wet Chemistry Methods
Author(s) -
Yatskiv Roman,
Tiagulskyi Stanislav,
Grym Jan,
Cernohorsky Ondrej
Publication year - 2018
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201700592
Subject(s) - nanorod , photoluminescence , diffusion , materials science , acceptor , layer (electronics) , substrate (aquarium) , rectification , exciton , analytical chemistry (journal) , doping , optoelectronics , chemical engineering , chemistry , nanotechnology , condensed matter physics , voltage , oceanography , physics , quantum mechanics , chromatography , geology , engineering , thermodynamics
Rectifying ZnO homojunctions are fabricated by simple wet chemistry methods. The p–n junction is formed between a p‐type nanostructured seed layer deposited by sol–gel method on phosphorus doped Si substrates and an array of n‐type nanorods grown by chemical bath deposition. The p‐type conductivity in the nanostructured layer is achieved by thermal diffusion of phosphorus from the Si substrate. The diffusion of phosphorus is supported by the observation of optical transitions related to neutral acceptor bound exciton in low‐temperature photoluminescence spectra. The p–n junction shows a high value of rectification ratio. Charge transport through the p‐n junction is discussed in terms of non‐ideal interface.