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The Recessed Trapezoidal Groove Dual‐Gate AlGaN/GaN E‐Mode Transistor by Using Depletion Enhancement Effect
Author(s) -
Yang Ling,
Mi Minhan,
Hou Bin,
Zhu Jiejie,
Zhang Meng,
Lu Yang,
Zhu Qing,
Zhou Xiaowei,
Yin Jun,
Wu Jiafeng,
Ma Xiaohua,
Hao Yue
Publication year - 2018
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201700550
Subject(s) - materials science , groove (engineering) , optoelectronics , high electron mobility transistor , transistor , leakage (economics) , threshold voltage , voltage , electrical engineering , engineering , metallurgy , economics , macroeconomics
The recessed trapezoidal groove dual‐gate profile is achieved by the low power CF 4 plasma etching based on the principle of ion‐scattering. The recessed trapezoidal groove dual‐gate architecture can increase the lateral broadening of depletion width, yielding the Enhancement‐mode operation. This device demonstrates a threshold voltage of 0.43 V, a maximum drain current of 480 mA mm −1 and a trans‐conductance of 308 mS mm −1 . The device exhibits a low off‐state leakage current of ≈10 −10 A mm −1 and gate induced drain leakage is effectively improved. An extrinsic current gain cut off frequency of 32 GHz and a maximum oscillation frequency of 65 GHz are deduced. The threshold voltage ( V th ) stability of the Schottky gate HEMT is investigated. The recessed trapezoidal groove dual‐gate exhibits a small shift of V th , which is attributed to the lateral extension of depletion region in the trapezoidal groove dual‐gate structure.