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Enahnced Al 0.11 Ga 0.89 N/Cu 2 O Solar Cells by a Semi Transparent Electrode
Author(s) -
Hering Karl Philipp,
Bergert Roman,
Mitic Slobodan
Publication year - 2018
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201700545
Subject(s) - materials science , sputtering , electrode , heterojunction , thin film , crystallite , argon , substrate (aquarium) , sapphire , optoelectronics , oxide , non blocking i/o , analytical chemistry (journal) , nanotechnology , optics , chemistry , metallurgy , catalysis , laser , oceanography , physics , organic chemistry , biochemistry , chromatography , geology
Polycrystalline Cu 2 O thin films are prepared on c‐sapphire substrates and n‐typeAl 0 .11Ga 0 .89 N templates by radio frequency sputtering at a temperature of 650 K employing a metallic target, an argon/oxygen gas mixture as well as a biased semi transparent electrode placed between the target and the substrate. Introducing that grid, we demonstrate the possibility to tune the cuprous oxide thin film properties, especially the morphology, by controlling the electron temperature in the plasma as well as the beneficial effect of a suspected reduction of interface state densities at photovoltaic heterostructures.