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Evolution of Electrically Active Defects in n‐GaN During Heat Treatment Typical for Ohmic Contact Formation
Author(s) -
Boturchuk Ievgen,
Scheffler Leopold,
Larsen Arne Nylandsted,
Julsgaard Brian
Publication year - 2018
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201700516
Subject(s) - ohmic contact , materials science , optoelectronics , composite material , layer (electronics)
Ohmic contact formation to n‐type GaN often involves high temperature steps, for example sintering at about 800 °C in the case of Ti‐based contacts. Such processing steps might cause changes in the distribution, concentration, and properties of the defects. The present work aims at contributing to the knowledge about defect evolution in GaN upon processing at different temperatures. The processing temperatures are selected according to fabrication procedures for commonly used ohmic contacts to n‐GaN: 300 °C (In‐based), 550 °C (Ta‐based), and 800 °C (Ti‐based). Properties and concentration of the defects are studied by the means of deep level transient spectroscopy (DLTS). Changes in carrier capture kinetics are monitored with varying filling pulse duration.