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New Process for Electrical Contacts on (100) N‐type Diamond
Author(s) -
Temahuki Nephi,
Gillet Rémi,
Sallet Vincent,
Jomard François,
Chikoidze Ekaterina,
Dumont Yves,
PinaultThaury MarieAmandine,
Barjon Julien
Publication year - 2017
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201700466
Subject(s) - ohmic contact , diamond , materials science , doping , optoelectronics , nanotechnology , engineering physics , metallurgy , engineering , layer (electronics)
Obtaining ohmic contacts on n‐type diamond is a very compelling concern in the framework of designing power electronic devices. The present contribution considers a new technological process combining microstructuring and highly phosphorus‐doped overgrowth to investigate quasi‐ohmic contacts on (100) phosphorus doped diamond. For now, the two processes were tested on (100) and (111) diamond single crystal substrates. The results are exposed and discussed.