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Impact of H‐Uptake from Forming Gas Annealing and Ion Implantation on the Photoluminescence of Si Nanoparticles
Author(s) -
Chulapakorn Thawatchart,
Primetzhofer Daniel,
Sychugov Ilya,
Suvanam Sethu Saveda,
Linnros Jan,
Hallén Anders
Publication year - 2018
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201700444
Subject(s) - photoluminescence , annealing (glass) , fluence , ion implantation , forming gas , materials science , hydrogen , silicon , nuclear reaction analysis , analytical chemistry (journal) , spectroscopy , ion , nanotechnology , optoelectronics , chemistry , metallurgy , environmental chemistry , physics , organic chemistry , quantum mechanics
Silicon nanoparticles (SiNPs) are formed by implanting 70 keV Si + into a SiO 2 ‐film and subsequent thermal annealing. SiNP samples are further annealed in forming gas. Another group of samples containing SiNP is implanted by 7.5 keV H + and subsequently annealed in N 2 ‐atmosphere at 450 °C to reduce implantation damage. Nuclear reaction analysis (NRA) is employed to establish depth profiles of the H‐concentration. Enhanced hydrogen concentrations are found close to the SiO 2 surface, with particularly high concentrations for the as‐implanted SiO 2 . However, no detectable uptake of hydrogen is observed by NRA for samples treated by forming gas annealing (FGA). H‐concentrations detected after H‐implantation follow calculated implantation profiles. Photoluminescence (PL) spectroscopy is performed at room temperature to observe the SiNP PL. Whereas FGA is found to increase PL under certain conditions, i.e., annealing at high temperatures, increasing implantation fluence of H reduces the SiNP PL. Hydrogen implantation also introduces additional defect PL. After low‐temperature annealing, the SiNP PL is found to improve, but the process is not found equivalently efficient as conventional FGA.