Premium
Tuning Resistive, Capacitive, and Synaptic Properties of Forming Free TiO 2‐x ‐Based RRAM Devices by Embedded Pt and Ta Nanocrystals
Author(s) -
Bousoulas Panagiotis,
Karageorgiou Ismini,
Aslanidis Vaggelis,
Giannakopoulos Kostas,
Tsoukalas Dimitris
Publication year - 2018
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201700440
Subject(s) - materials science , neuromorphic engineering , resistive random access memory , capacitive sensing , optoelectronics , capacitance , nanocrystal , resistive touchscreen , nanotechnology , thin film , electrode , voltage , electrical engineering , chemistry , computer science , machine learning , artificial neural network , engineering
The incorporation of metal nanocrystals (NCs) within TiO 2‐x thin films offers great advantages for adjusting a wide range of non‐volatile memory properties, ranging from resistive and capacitive switching to synaptic capabilities. In this study, it is demonstrated that by inserting very small NCs (≈3 nm diameter) of either Pt or Ta, resistance changes over six orders of magnitude and capacitance changes over two orders of magnitude can be induced, with promising variability due to the local enhancement of the electric field effect, while these effects are attributed to the energy band diagram configuration induced by the presence of NCs. The gradual switching pattern observed exhibits also attractive synaptic properties, offering higher design flexibility for neuromorphic applications.