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Structural and Optoelectronic Properties of β‐In 2 S 3 Thin Films to be Applied on Cadmium Reduced Solar Cells
Author(s) -
Galarza Gutiérrez Uziel,
Albor Aguilera María Lourdes,
Hernández Vasquez Cesar,
Flores Márquez Jose M.,
González Trujillo Miguel A.,
Jiménez Olarte Daniel,
Aguilar Hernández Jorge R.,
Remolina Millán Aduljay
Publication year - 2018
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201700428
Subject(s) - cadmium telluride photovoltaics , thin film , materials science , photovoltaic system , optoelectronics , layer (electronics) , cadmium , buffer (optical fiber) , solar cell , chemical bath deposition , tetragonal crystal system , phase (matter) , nanotechnology , chemistry , computer science , electrical engineering , metallurgy , telecommunications , engineering , organic chemistry
In 2 S 3 thin films are prepared by chemical bath deposition (CBD) technique to be applied as buffer layer in CdTe solar cells. CdTe photovoltaic devices are developed using In 2 S 3 as “standard buffer layer” in order to reduce the CdS thickness used as window material. It is important to examine potential thin films in a prospective life cycle study, focusing on direct costs, resource availability, and environmental impacts. Open and closed CBD system influence on the In 2 S 3 physical properties is analyzed. Stable tetragonal β‐In 2 S 3 phase was confirmed by X‐ray diffraction. Electrical properties were determined by four‐point probe technique obtaining a resistivity value of 10 2 Ω cm. CdTe solar cells performance was studied by measuring J–V characteristics and spectral quantum efficiencies. These results reveal In 2 S 3 thin films as buffer layer reduce the cadmium quantity used in solar cells manufacture and improve their current collection in blue wavelength region (300–500 nm).