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Variable Barrier Height AlGaAs/GaAs Quantum Cascade Laser Operating at 3.7 THz
Author(s) -
Lin TsungTse,
Hirayama Hideki
Publication year - 2018
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201700424
Subject(s) - terahertz radiation , lasing threshold , optoelectronics , cascade , materials science , quantum well , laser , gallium arsenide , semiconductor , operating temperature , heterojunction , optics , physics , chemistry , wavelength , chromatography , thermodynamics
THz (QCLs) are promising large output power semiconductor‐based THz sources with narrow bandwidths and wide operating frequency ranges. However, the operating temperature of THz QCLs is still limited by the design of its active region. Matyas et al. (2012) theoretically predicted that AlGaAs/GaAs THz QCLs with higher optical gain could be obtained by introducing a variable barrier height structure (Matyas et al., J. Appl. Phys . 2012 , 111 , 103106). Based on the proposed variable barrier QC structure, we fabricate AlGaAs/GaAs three‐well type THz QCLs with an additional very thin second extraction barrier and a low barrier height emission barrier. With this device, we obtain lasing operation at 3.7 THz at a maximum operating temperature of 145 K.