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Polarization Dependence of Photoluminescence from InAs Quantum Dots Grown on InP(311)B Substrates Using Digital Embedding Method
Author(s) -
Akahane Kouichi,
Yamamoto Hiroyuki,
Matsumoto Atsushi,
Umezawa Toshimasa,
Sotobayashi Hideyuki,
Yamamoto Naokatsu
Publication year - 2018
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201700418
Subject(s) - superlattice , photoluminescence , quantum dot , materials science , anisotropy , polarization (electrochemistry) , optoelectronics , substrate (aquarium) , condensed matter physics , optics , chemistry , physics , oceanography , geology
Hybrid structures of InGaAs/InAlAs two‐dimensional quantum well superlattices and self‐assembled InAs quantum dots (QD) are fabricated on an InP(311)B substrate by the digital embedding method. Samples, in which the period of the superlattice is changed, are evaluated by atomic force microscope and polarized photoluminescence (PL). The intensity of PL polarized in the [‐233] direction is found to be higher than that in the [01–1] direction, which is affected by the structural anisotropy of InAs QDs and crystal anisotropy of the (311) surface. The polarization degree can be controlled by changing the period of the superlattice. These results indicate that the thickness of the InAlAs barrier of the superlattice plays an important role for controlling optical properties of InAs QDs embedded in superlattices.