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Bipolar Resistive Switching Properties of Hf 0.5 Zr 0.5 O 2 Thin Film for Flexible Memory Applications
Author(s) -
Wu Zhipeng,
Zhu Jun,
Zhou Yunxia,
Liu Xingpeng
Publication year - 2018
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201700396
Subject(s) - materials science , ohmic contact , resistive random access memory , thermal conduction , optoelectronics , voltage , space charge , conductance , substrate (aquarium) , non volatile memory , reproducibility , polyethylene terephthalate , electrical conductor , thin film , electrical engineering , composite material , nanotechnology , condensed matter physics , electron , chemistry , oceanography , physics , layer (electronics) , quantum mechanics , geology , engineering , chromatography
An Au/Ni/Hf 0.5 Zr 0.5 O 2 /Au flexible memory device fabricated on a polyethylene terephthalate substrate was studied for flexible resistive random access memory applications. A typical bipolar resistive switching behavior was revealed with an OFF/ON ratio of approximately 15. The reproducibility and uniformity were investigated using 100 repetitive write/erase cycles. The retention property did not degrade for up to 5 × 10 4 s, and the resistive switching properties did not degrade even under bending conditions, which indicated good mechanical flexibility. The current–voltage characteristics of the memory device show a Poole–Frenkel emission conduction mechanism in the high‐voltage region in the high‐resistance state, while in the low‐voltage region, the Ohmic contact and space charge limit current responded to the low‐resistance state and high‐resistance state, respectively. Combined with the conductance mechanism, the resistive switching behavior is attributed to conductive filaments forming and rupturing due to oxygen vacancies migrating under the external driving electric field.