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Electron irradiation of near‐UV GaN/InGaN light emitting diodes
Author(s) -
Lee InHwan,
Polyakov Alexander Y.,
Smirnov N. B.,
Shchemerov I. V.,
Shmidt N. M.,
Tal'nishnih N. A.,
Shabunina E. I.,
Cho HanSu,
Hwang SungMin,
Zinovyev R. A.,
Didenko S. I.,
Lagov P. B.,
Pearton S. J.
Publication year - 2017
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201700372
Subject(s) - electroluminescence , light emitting diode , optoelectronics , irradiation , materials science , diode , fluence , electron , quantum efficiency , wavelength , physics , nanotechnology , layer (electronics) , nuclear physics
Irradiation with 6 MeV electrons of near‐UV (peak wavelength 385–390 nm) multi‐quantum‐well (MQW) GaN/InGaN light emitting diodes (LEDs) causes an increase in density of deep electron traps near E c −0.8 and E c −1 eV, and correlates to a 90% decrease of electroluminescence (EL) efficiency after a fluence of 1.1 × 10 16 cm −2 . The likely origin of the EL efficiency decrease is this increase in concentration of the E c −0.8 eV and E c −1 eV traps.