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The Influence of n‐AlGaN Inserted Layer on the Performance of Back‐Illuminated AlGaN‐Based p‐i‐n Ultraviolet Photodetectors
Author(s) -
Chen Yiren,
Zhang Zhiwei,
Li Zhiming,
Jiang Hong,
Miao Guoqing,
Song Hang
Publication year - 2018
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201700358
Subject(s) - photodetector , materials science , ultraviolet , optoelectronics , layer (electronics) , dark current , composite material
In this paper, comparison between back‐illuminated p‐i‐n AlGaN‐based ultraviolet photodetectors (UV‐PDs) with and without an n‐AlGaN inserted layer is carried out. The results show that the introduction of n‐AlGaN interlayer significantly reduces the dark current of AlGaN‐based UV‐PDs. The mechanism involved is clarified and can be attributed to the role of n‐AlGaN interlayer which depletes to isolate the leakage paths generated by dislocations of AlGaN material. Besides, it also greatly improves the spectral performances of the p‐i‐n AlGaN‐based UV‐PDs, which can be related to the additional built‐in electric fields introduced by n‐AlGaN inserted layer that contribute to separate and transport the photon‐generated carriers.