Premium
Geometry‐induced quantum effects in periodic nanostructures
Author(s) -
Tavkhelidze A.,
Jangidze L.,
Mebonia M.,
Piotrowski K.,
Więckowski J.,
Taliashvili Z.,
Skhiladze G.,
Nadaraia L.
Publication year - 2017
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201700334
Subject(s) - seebeck coefficient , materials science , doping , wafer , electrical resistivity and conductivity , condensed matter physics , hall effect , thermoelectric effect , optoelectronics , composite material , thermal conductivity , physics , thermodynamics , quantum mechanics
Recently, geometry‐induced quantum effects in periodic nanostructures were introduced and observed. Nanograting has been shown to dramatically improve thermoelectric and electron emission properties, and originate a geometry induced doping or G‐doping. Here, we concentrate on experimental investigation of G‐doping. We fabricate nanograting (NG) layers and measure their electron transport properties. The grating was fabricated on the surface of a silicon on insulator (SOI) wafer device layer using laser interference lithography followed by reactive ion etching. Next, large square islands were shaped in the device layer. The characteristics of NG and plain islands were compared to investigate G‐doping. Resistivity temperature dependences were recorded in the range of 4–300 K. For all 21 samples, the NG layers show a 2–3 order of magnitude reduction in resistivity with respect to the plain layer. Hall coefficient and thermopower measurements demonstrate that the NG layers are n‐type. Obtained G‐doping level corresponded to an “effective impurity” concentration of 10 18 cm −3 . The dependence of the resistivity and Hall coefficient on temperature and magnetic field were recorded in the ranges of 2–300 K and 0–3 T, respectively.