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Carbon‐hydrogen related defects in SiGe observed after dc H plasma treatment
Author(s) -
Stübner Ronald,
Kolkovsky Vladimir,
Weber Jörg,
Abrosimov Nikolay V.
Publication year - 2017
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201700329
Subject(s) - hydrogen , carbon fibers , plasma , chemistry , hydrogen atom , atom (system on chip) , carbon atom , analytical chemistry (journal) , materials science , atomic physics , physics , composite number , alkyl , organic chemistry , chromatography , quantum mechanics , computer science , composite material , embedded system
In the present study, the electrical and structural properties of two carbon‐hydrogen related DLTS levels (E42 and E262) that appear after hydrogen plasma treatment are investigated in diluted Si 1− x Ge x alloys. E42 and E262 were previously observed in pure Si after hydrogenation by a dc hydrogen plasma. They were correlated with different charge states of a carbon–hydrogen complex, where H is located on the anti‐bonding position at the carbon atom (CH 1AB ). By utilizing the Laplace DLTS technique we show that the DLTS peaks E42 and E262 consist of several components in Si 1− x Ge x . These components can be quantitatively explained by the presence of Ge atoms in the first and second nearest‐neighborhood of the CH 1AB complex. The observed Laplace DLTS spectra indicate a preference of hydrogen to bond to carbon with a Ge atom in its first nearest‐neighborhood.