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Electronic absorption of interstitial boron‐related defects in silicon
Author(s) -
Khirunenko Lyudmila I.,
Sosnin Mikhail G.,
Duvanskii Andrei V.,
Abrosimov Nikolai V.,
Riemann Helge
Publication year - 2017
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201700245
Subject(s) - boron , silicon , oxygen , annealing (glass) , dissociation (chemistry) , irradiation , materials science , absorption spectroscopy , analytical chemistry (journal) , spectral line , atomic physics , oxygen atom , electron beam processing , radiochemistry , crystallography , chemistry , physics , optics , molecule , nuclear physics , optoelectronics , metallurgy , organic chemistry , chromatography , astronomy
We report the data on the electronic absorption of interstitial boron‐related defects in silicon, irradiated with 5 MeV electrons. Two new electronic absorption features have been revealed in the spectrum of boron‐doped Si. The sharp line at 4385.2 cm −1 is detected in Si irradiated at 80 K and subjected to the subsequent annealing up to 300 K. The emergence of the registered line depends on the concentration of boron and does not depend on the presence of oxygen and carbon in the samples. The revealed line is associated with B i B s complex. It is shown that the presence of oxygen in the samples inhibits the formation of B i B s defects. The disappearance of the 4385.2 cm −1 line upon annealing is accompanied by the emergence of a line at 7829.5 cm −1 in the spectrum. The appearance of the 7829.5 cm −1 line depends on the presence of carbon in the samples. The registered 7829.5 cm −1 line is ascribed to B i C s complex. It is argued that, in the oxygen‐rich material, B i liberated as a result of the dissociation of both B i O i and B i B s defects are involved in the formation of B i C s . In oxygen‐lean Si, only B i liberated at the dissociation of B i B s participate in the formation of B i C s .