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Characterization of GaN films grown on hafnium foils by pulsed sputtering deposition
Author(s) -
Kim Hyeryun,
Ohta Jitsuo,
Ueno Kohei,
Kobayashi Atsushi,
Fujioka Hiroshi
Publication year - 2017
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201700244
Subject(s) - wurtzite crystal structure , materials science , sputtering , sapphire , optoelectronics , hafnium , deposition (geology) , wide bandgap semiconductor , zinc , sputter deposition , polar , gallium nitride , analytical chemistry (journal) , thin film , layer (electronics) , zirconium , nanotechnology , metallurgy , optics , chemistry , paleontology , laser , physics , chromatography , sediment , biology , astronomy
GaN films were grown on nearly lattice‐matched Hf foils by pulsed sputtering deposition (PSD) which showed highly c‐axis oriented structures. Unlike GaN films directly grown on Hf foils that showed coexisting zinc blende and wurtzite phases, as a result of interfacial reactions the insertion of HfN reaction barrier layers between GaN and Hf suppressed the inclusion of the zinc blende phase. The utilization of surface‐oxidized AlN interlayers resulted in GaN films on Hf foils with controlled polarity (i.e., Ga‐polar). The residual carrier concentration in the Ga‐polar GaN films was as low as 3.2 × 10 16 cm −3 . These results revealed that the proposed technique can yield high‐quality Ga‐polar GaN films on Hf foils that can be potentially used in large‐area and flexible GaN‐based optical devices.